[S3] Advanced FET Technologies & Optoelectronics

1:30 PM - 1:50 PM JST(4:30 AM - 4:50 AM UTC)

[S3-02] Sub 0.5 nm-EOT and Low Leakage Current Density in p-Ge MOS Capacitors Achieved by Interface Engineering

*Huan Wu¹, Kuei-Shu Chang-Liao^1,2 (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan))

Keywords:

p-Ge MOSCAP,EOT,Interface Engineering,In-situ NH3 plasma,HZH