[S3] Advanced FET Technologies & Optoelectronics

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[S3-05] Fabrication and evaluation of GeSn photodiodes with metal-interlayer-semiconductor-metal structure formed at an ultra-low temperature (200 ℃)

*Yajun Feng¹, Genya Kuroeda¹, Keisuke Yamamoto^2,3, Shigehisa Shibayama⁴, Osamu Nakatsuka^4,5, Dong Wang^1,3 (1. IGSES, Kyushu Univ. (Japan), 2. RESI, Kumamoto Univ. (Japan), 3. FES, Kyushu Univ. (Japan), 4. GSE, Nagoya Univ. (Japan), 5. IMaSS, Nagoya Univ. (Japan))

Keywords:

GeSn photodiodes,metal-interlayer-semiconductor-metal structure,ultra-low temperature (200 ℃)