[S3] Advanced FET Technologies & Optoelectronics

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[S3-06] Reverse current suppression via mesa depth control in GeSn-based p-n junction diodes

*Kei Yamamoto¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1. Graduate School of Engineering, Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))

Keywords:

GeSn,p-n diode,mesa,electric field