[S4] Oxide Semiconductors

3:25 PM - 3:55 PM JST(6:25 AM - 6:55 AM UTC)

[S4-01] Gate-All-Around Vertical InGaZnO Channel Transistor for 4F² DRAM application

*Keiko Ariyoshi¹, Shoichi Kabuyanagi¹, Kenichi Haga¹, Kei Sakamoto¹, Shosuke Fujii¹, Takeshi Fujimaki¹, Tseng Fu Lu², Szu Yao Chang², Chiang-Lin Shih² (1. KIOXIA Corporation (Japan), 2. Nanya Technology Corporation (Taiwan))

Keywords:

oxide semiconductor,memory,DRAM,gate-all-around