[S4] Oxide Semiconductors

3:55 PM - 4:15 PM JST(6:55 AM - 7:15 AM UTC)

[S4-02] InGeO:F Channel Engineering by Fluorination Based on a GeO₂ Buffer Layer with Enhanced Mobility and Negative-Bias Stability

Shundong Hu^1,2,3, *Jiayi Wang^1,2,3, Kuo Zhang^1,2,3, Nannan You^1,2,3, Yang Xu^1,2,3, Ling Li^1,3, Shengkai Wang^1,2,3 (1. State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing (China), 2. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing (China), 3. University of Chinese Academy of Sciences (China))

Keywords:

InGeO:F,TFT,GeO2