[S4] Oxide Semiconductors

4:35 PM - 4:55 PM JST(7:35 AM - 7:55 AM UTC)

[S4-04] Defect Characterization of 3D Channel-All-Around Transistors Using Variable Photocurrent Method

*Kuo Zhang^1,2,3, Jiayi Wang^1,3, Shundong Hu^1,2,3, Tianhao Liao^1,2,3, Huan Liu^1,2,3, Yang Xu^1,3, Nannan You^1,3, Ling Li^1,2, Shengkai Wang^1,2,3 (1. Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences (China), 2. University of Chinese Academy of Sciences (China), 3. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics (China))

Keywords:

characterization,oxide semiconductor,defect