[S5] Thermal Oxidation Mechanism & 2D Materials

9:00 AM - 9:20 AM JST(12:00 AM - 12:20 AM UTC)

[S5-01] First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface

*Hiroyuki Kageshima¹, Insung Seo¹, Toru Akiyama², Kenji Shiraishi³ (1. Shimane University (Japan), 2. Mie University (Japan), 3. Tohoku University (Japan))

Keywords:

thermal Si oxide,oxidation process,theoretical study