IWDTF2025
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Session Details

Thermal Oxidation Mechanism & 2D MaterialsSimulation & Characterization

[S5]Thermal Oxidation Mechanism & 2D Materials

Fri. Nov 7, 2025 9:00 AM - 10:40 AM JST
Fri. Nov 7, 2025 12:00 AM - 1:40 AM UTC
Sendai City War Reconstruction Memorial Hall(Exhibition Hall (BF1))
Chair:Takanobu Watanabe(Waseda University), Koji Kita(The University of Tokyo)
9:00 AM - 9:20 AM JST(12:00 AM - 12:20 AM UTC)

[S5-01]First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface

*Hiroyuki Kageshima1, Insung Seo1, Toru Akiyama2, Kenji Shiraishi3 (1. Shimane University (Japan), 2. Mie University (Japan), 3. Tohoku University (Japan))
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9:20 AM - 9:40 AM JST(12:20 AM - 12:40 AM UTC)

[S5-02]Oxygen Pressure Dependence of Linear-Parabolic Growth Retardation on Si(111)

*Hengyu Wen1, Yasutaka Tsuda2, Yuki Okabe1, Akitaka Yoshigoe2, Jiayi Tang3, Yuji Takakuwa4, Shuichi Ogawa1 (1. Nihon University (Japan), 2. JAEA (Japan), 3. JASRI (Japan), 4. Tohoku University (Japan))
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9:40 AM - 10:00 AM JST(12:40 AM - 1:00 AM UTC)

[S5-03]Cooperation Mechanism between Single- and Double-Step Oxidation Reaction Loops during Dry Oxidation on p-Si(001) and n-Si(001) Surfaces

*Yuki Okabe1, Yasutaka Tsuda2, Hengyu Wen1, Akitaka Yoshigoe2, Yuji Takakuwa3, Shuichi Ogawa1 (1. Nihon University (Japan), 2. JAEA (Japan), 3. Tohoku University (Japan))
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10:00 AM - 10:20 AM JST(1:00 AM - 1:20 AM UTC)

[S5-04]Segregation induced formation of two-dimensional like GeSn ultra-thin crystal

*Shigehisa Shibayama1, Taiga Mtasumoto1, Akio Ohta2, Ryo Yokogawa3,4,5, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,6 (1. Grad. Sch. of Eng., Nagoya Univ. (Japan), 2. Faculty of Sci., Fukuoka Univ. (Japan), 3. RISE, Hiroshima Univ. (Japan), 4. Grad. Sch. of Adv. Sci. and Eng., Hiroshima Univ. (Japan), 5. MREL (Japan), 6. IMaSS, Nagoya Univ. (Japan))
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10:20 AM - 10:40 AM JST(1:20 AM - 1:40 AM UTC)

[S5-05]Role of Annealing Atmosphere Towards Stoichiometry and Chemical Integrity of Solution-Processed MoS2 Thin films

*Md Iftekharul Alam1, Shungo Nagata1, Jaehyo Jang2, Hayato Kosaka1, Naoki Matsunaga2, Yoshiteru Amemiya1, Ryo Yokogawa1, Hitoshi Wakabayashi2, Akinobu Teramoto1 (1. Hiroshima Uiversity (Japan), 2. Institute of Science Tokyo (Japan))
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