[S5] Thermal Oxidation Mechanism & 2D Materials

9:20 AM - 9:40 AM JST(12:20 AM - 12:40 AM UTC)

[S5-02] Oxygen Pressure Dependence of Linear-Parabolic Growth Retardation on Si(111)

*Hengyu Wen¹, Yasutaka Tsuda², Yuki Okabe¹, Akitaka Yoshigoe², Jiayi Tang³, Yuji Takakuwa⁴, Shuichi Ogawa¹ (1. Nihon University (Japan), 2. JAEA (Japan), 3. JASRI (Japan), 4. Tohoku University (Japan))

Keywords:

Si dry oxidation,Linear-parabolic growth,Oxidation-induced Si-O breaking,Heat of adsorption,Hot hole trapping,Zero-order reaction,Real time XPS