[S5] Thermal Oxidation Mechanism & 2D Materials

9:40 AM - 10:00 AM JST(12:40 AM - 1:00 AM UTC)

[S5-03] Cooperation Mechanism between Single- and Double-Step Oxidation Reaction Loops during Dry Oxidation on p-Si(001) and n-Si(001) Surfaces

*Yuki Okabe¹, Yasutaka Tsuda², Hengyu Wen¹, Akitaka Yoshigoe², Yuji Takakuwa³, Shuichi Ogawa¹ (1. Nihon University (Japan), 2. JAEA (Japan), 3. Tohoku University (Japan))

Keywords:

Si dry oxidation,Oxidation-induced defect generation,Trapping-mediated adsorption,Excess minority carrier recombination,Hot hole trapping,Real time XPS