[S5] Thermal Oxidation Mechanism & 2D Materials

10:20 AM - 10:40 AM JST(1:20 AM - 1:40 AM UTC)

[S5-05] Role of Annealing Atmosphere Towards Stoichiometry and Chemical Integrity of Solution-Processed MoS₂ Thin films

*Md Iftekharul Alam¹, Shungo Nagata¹, Jaehyo Jang², Hayato Kosaka¹, Naoki Matsunaga², Yoshiteru Amemiya¹, Ryo Yokogawa¹, Hitoshi Wakabayashi², Akinobu Teramoto¹ (1. Hiroshima Uiversity (Japan), 2. Institute of Science Tokyo (Japan))

Keywords:

Solution process,thin film MoS2,atomic ratio,oxidation ratio,post-annealing