[S6] Power Device & Processes (1)

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[S6-01] Carbon P_b centers in 4H-SiC/SiO₂ interface

*Takahide Umeda Umeda¹, Mitsuru Sometani², Bunta Shimabukuro¹, Yusuke Nishiya³, Yu-ichiro Matsushita³ (1. Univ. of Tsukuba (Japan), 2. AIST (Japan), 3. Quemix Inc./Tokyo Univ. (Japan))

Keywords:

MOS interface states,4H-SiC MOSFET,ESR spectroscopy,EDMR spectroscopy,dangling bond center