IWDTF2025
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Session Details

Power Device & ProcessesElectron device, process, and characterization

[S6]Power Device & Processes (1)

Fri. Nov 7, 2025 1:30 PM - 3:10 PM JST
Fri. Nov 7, 2025 4:30 AM - 6:10 AM UTC
Sendai City War Reconstruction Memorial Hall(Exhibition Hall (BF1))
Chair:Motoyuki Sato(Tokyo Electron), Toshinori Numata(Toyota Technological Institute)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[S6-01]Carbon Pb centers in 4H-SiC/SiO2 interface

*Takahide Umeda Umeda1, Mitsuru Sometani2, Bunta Shimabukuro1, Yusuke Nishiya3, Yu-ichiro Matsushita3 (1. Univ. of Tsukuba (Japan), 2. AIST (Japan), 3. Quemix Inc./Tokyo Univ. (Japan))
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2:00 PM - 2:20 PM JST(5:00 AM - 5:20 AM UTC)

[S6-02]Study on Possible Origin of Improved 4H-SiC (0001) MOS Interface Characteristics with Direct NO Oxynitridation Based on Consideration of Oxinitride Growth Kinetics

*Yutaro Uchida1, Atsushi Tamura1, Koji Kita1 (1. The Univ. of Tokyo (Japan))
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2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

[S6-03]Impact of Substrate-Surface Oxidation Treatment and Post-Deposition Annealing on β-Ga2O3 (001) MOS Interfaces with ALD-Deposited Al2O3 and SiO2

*Atsushi Tamura1, Hayama Imaida1, Hiroyasu Maekawa2, Koji Kita1,2 (1. Dept. of Advanced Materials Science, The Univ. of Tokyo (Japan), 2. Dept. of Materials Engineering, The Univ. of Tokyo (Japan))
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2:40 PM - 3:10 PM JST(5:40 AM - 6:10 AM UTC)

[S6-04]Exploration of new materials for meta-materials and power semiconductor applications

*Kentaro Kaneko1 (1. Ritsumeikan Univ. (Japan))
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