[S6] Power Device & Processes (1)

2:00 PM - 2:20 PM JST(5:00 AM - 5:20 AM UTC)

[S6-02] Study on Possible Origin of Improved 4H-SiC (0001) MOS Interface Characteristics with Direct NO Oxynitridation Based on Consideration of Oxinitride Growth Kinetics

*Yutaro Uchida¹, Atsushi Tamura¹, Koji Kita¹ (1. The Univ. of Tokyo (Japan))

Keywords:

SiC,MOS interface,Oxynitridation