[S6] Power Device & Processes (1)

2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

[S6-03] Impact of Substrate-Surface Oxidation Treatment and Post-Deposition Annealing on β-Ga₂O₃ (001) MOS Interfaces with ALD-Deposited Al₂O₃ and SiO₂

*Atsushi Tamura¹, Hayama Imaida¹, Hiroyasu Maekawa², Koji Kita^1,2 (1. Dept. of Advanced Materials Science, The Univ. of Tokyo (Japan), 2. Dept. of Materials Engineering, The Univ. of Tokyo (Japan))

Keywords:

Ga2O3,power devices,interface,O3,atomic layer deposition