[S7] Power Device & Processes (2)

3:25 PM - 3:55 PM JST(6:25 AM - 6:55 AM UTC)

[S7-01] Effects of Nitrogen Doping on Electrical Properties of Ga₂O₃

*Masataka Higashiwaki^1,2, Jin Inajima¹, Tomoki Uehara¹, Yusuke Teramura¹, Kohki Tsujimoto¹, Satoko Honda¹, Zhenwei Wang² (1. Osaka Metropolitan Univ. (Japan), 2. National Institute of Information and Communications Technology (Japan))

Keywords:

Gallium oxide (Ga2O3),Molecular beam epitaxy (MBE),Nitrogen