IWDTF2025
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Session Details

Power Device & ProcessesElectron device, process, and characterization

[S7]Power Device & Processes (2)

Fri. Nov 7, 2025 3:25 PM - 4:25 PM JST
Fri. Nov 7, 2025 6:25 AM - 7:25 AM UTC
Sendai City War Reconstruction Memorial Hall(Exhibition Hall (BF1))
Chair:Motoyuki Sato(Tokyo Electron), Toshinori Numata(Toyota Technological Institute)
3:25 PM - 3:55 PM JST(6:25 AM - 6:55 AM UTC)

[S7-01]Effects of Nitrogen Doping on Electrical Properties of Ga2O3

*Masataka Higashiwaki1,2, Jin Inajima1, Tomoki Uehara1, Yusuke Teramura1, Kohki Tsujimoto1, Satoko Honda1, Zhenwei Wang2 (1. Osaka Metropolitan Univ. (Japan), 2. National Institute of Information and Communications Technology (Japan))
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3:55 PM - 4:25 PM JST(6:55 AM - 7:25 AM UTC)

[S7-02]Unique techniques of ALD for semiconductor devices

*TOSHIHIDE NABATAME1 (1. National Institute for Materials Science (Japan))
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