[S9] S9 Materials Science and high temperature processing of widegap materials III | 日本金属学会2021年秋期(第169回)講演大会

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公募シンポジウム講演

[S9]S9 Materials Science and high temperature processing of widegap materials III

Thu. Sep 16, 2021 1:00 PM - 4:10 PM JST
Thu. Sep 16, 2021 4:00 AM - 7:10 AM UTC

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座長:福山博之(東北大学)、宇治原徹(名古屋大学)

※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間5分、基調講演と招待講演は5～10分）

1:00 PM - 1:40 PM JST(4:00 AM - 4:40 AM UTC)

[S9.4][Keynote Lecture] Understanding of transport phenomena in TSSG process of SiC crystal growth by CFD and its optimization by AI

*Okano Yasunori¹, Takehara Yuto² (1. Osaka Univ., 2. Osaka Univ.)

1:40 PM - 2:00 PM JST(4:40 AM - 5:00 AM UTC)

[S9.5]6 inch SiC bulk crystal grown by solution method aided by ML technology

*Toru Ujihara^1,2,3,4, Can Zhu¹, Yosuke Tsunooka¹, Koki Suzuki¹, Wangchen Yu¹, Xinbo Liu, Yifan Dang, Tomoaki Furusho¹, Masaru Isono¹, Kentaro Kutsukake, Shunta Harada¹, Miho Tagawa¹ (1. Nagoya Univ., 2. RIKEN, 3. AIST, 4. UJ-Crystal)

2:00 PM - 2:20 PM JST(5:00 AM - 5:20 AM UTC)

[S9.6]Reduction of TSDs in 4H-SiC crystals grown by a hybrid method combined with solution growth and PVT growth on higher off-angle seeds

*Takeshi Mitani¹, Kazuma Eto¹, Kenji Momose², Tomohisa Kato¹ (1. AIST, 2. Showa Denko)

2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

[S9.7]Step structures of 4H-SiC (000-1) in Si based solvents at 1873 K after interface reconstruction

*Hideto AOKI¹, Didier Chaussende², Kawanishi Sakiko³, Takeshi Mitasni⁴, Takeshi Yoshikawa¹ (1. The Univ. of Tokyo, 2. Grenoble-Alpes Univ.-CNRS, 3. Tohoku Univ., 4. ational Institute of Advanced Industrial Science and Technology)

2:40 PM - 2:50 PM JST(5:40 AM - 5:50 AM UTC)

break

2:50 PM - 3:30 PM JST(5:50 AM - 6:30 AM UTC)

[S9.8][Keynote Lecture] Thermophysical property measurements of high temperature melts using an electrostatic levitation method

*Takehiko Ishikawa¹ (1. Japan Aerospace Exploration Agency)

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[S9.9]Effect of carbon on the surface properties of molten Si and Fe-Si alloys

*Takeshi YOSHIKAWA¹, Taka NARUMI² (1. U.Tokyo, 2. U.Tokyo (Present:Kyoto University）)

3:50 PM - 4:10 PM JST(6:50 AM - 7:10 AM UTC)

[S9.10]Initial behavior of liquid-phase epitaxial growth of SiC using SiC fine particle-dispersed Si-Cr solvent

*Tomoyuki KASHIMURA¹, Shota YAMAGUCHI¹, Takeshi YOSHIKAWA¹ (1. IIS U.Tokyo)

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