Session Details

[24a-31B-1~9]17.3 Layered materials

Sun. Mar 24, 2024 9:00 AM - 11:30 AM JST
Sun. Mar 24, 2024 12:00 AM - 2:30 AM UTC
31B (Building No. 3)
Hiroki Hibino(Kwansei Gakuin Univ.)

[24a-31B-1]Theoretical study on hBN island edges in CVD initial growth

〇(M1)Ryo Imamura1, Hiroyuki Kageshima1 (1.Shimane Univ.)

[24a-31B-2]Electronically tunable surface adsorption on point defects in hexagonal boron nitride for precursors of tungsten disulfide: a theoretical study

〇Zeyuan Ni1, Takashi Matsumoto1, Kazuyoshi Matsuzaki1, Masaaki Matsukuma1 (1.Tokyo Electron Technology Solutions, Ltd.)

[24a-31B-3]Rapid synthesis of MAX phases using induction heating and fundamental properties of MXenes

Daisuke Nishine1, Yushiro Kiya1, Mahito Yamamoto1, 〇Mitsuru Inada1 (1.Kansai Univ.)

[24a-31B-4]Atomic Layer Deposition of WS2 using n-BuNC-W(CO)5 as a W Precursor

〇Yukihito Nishi1, Hiroshi Yokota1, Hideaki Machida2, Masato Ishikawa2, Hiroshi Sudou2, Hitoshi Wakabayashi3, Ryo Yokogawa1,4, Naomi Sawamoto1,4, Atsushi Ogura1,4 (1.Meiji Univ., 2.Gas-phase Growth Ltd., 3.Tokyo Tech, 4.Meiji Renewable Energy Laboratory)

[24a-31B-5]Influence on surface morphology of WS2 films synthesized by oxidized W films

〇(B)Hayate Takagi1, Kazushi Sekiya2, Fumitaka Ohashi1, Himanshu Jha1, Tetsuji Kume1,2 (1.Gifu Univ., 2.Grad. Gifu Univ.)

[24a-31B-6]Design and fabrication of multilayer structure by stacking two-dimensional materials

〇Yuuto Kamijou1, Noriyuki Urakami1,2, Yoshio Hashimoto1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)

[24a-31B-7]Thickness Measurement of PVD-WS2 Continuous Films by AFM

〇(B)Soma Ito1, Teraoka Kaede1, Shinya Imai1, Naoki Matsunaga1, Keita Kurohara1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1 (1.Tokyo Tech)

[24a-31B-8]Analysis of plane-view transmission electron microscopy image for MoS2 film by sputtering on amorphous SiO2

〇Shinya Imai1, Iriya Muneta1, Takamasa Kawanago1, Kuniyuki Kakushima1, Tetsuya Tatsumi1, Shigetaka Tomiya1, Hitoshi Wakabayashi1 (1.Tokyo Tech.)

[24a-31B-9]Observation of monolayer hBN films on a silicon substrate with silicon nitride film.

〇Yoshiaki Hattori1, Takashi Taniguchi2, Kenji Watanabe2, Masatoshi Kitamura1 (1.Kobe Univ., 2.NIMS)