Session Details

[25a-12M-1~11]7.2 Applications and technologies of electron beams

Mon. Mar 25, 2024 9:00 AM - 12:00 PM JST
Mon. Mar 25, 2024 12:00 AM - 3:00 AM UTC
12M (Building No. 1)
Yoichiro Neo(Shizuoka Univ.), Katsuhisa Murakami(AIST)

[25a-12M-1]Time-resolved observation of photoinduced phase transition of Ti3O5 using an ultrafast transmission electron microscope

〇Shuhei Hatanaka1,2, Taro Tsuchiya2, Shuhei Ichikawa1,2, Jun Yamasaki1,3, Kazuhisa Sato1,2 (1.RC-UHVEM, Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.IMaSS, Nagoya Univ.)

[25a-12M-2]Precise measurement of an electron source size for electron microscopy

〇Soichiro Matsunaga1, Erina Kawamoto1 (1.Hitachi R&D group)

[25a-12M-3]Dependence of Oxidation Resistance on Nitrogen Compositions of Reactive Sputter-Deposited Hafnium Nitride Thin Films

〇Tomoaki Osumi1, Masayoshi Nagao2, Yasuhito Gotoh1 (1.Kyoto Univ., 2.AIST)

[25a-12M-4]Work function of CeB6 surface with oxygen exposure

〇Ryohei Tsuruta1, Shunsuke Yanagi1, Motoya Arai1, Kosuke Oba1, Masahiro Sasaki1, Yoichi Yamada1 (1.Univ. Tsukuba)

[25a-12M-5]Stabilization of Cerium Hexaboride Field Emitter by Thermal Oxidation

〇Shunsuke Yanagi1, Ryohei Tsuruta1, Motoya Arai1, Kousuke Oba1, Masahiro Sasaki1, Yoichi Yamada1 (1.Univ. Tsukuba)

[25a-12M-6]Effects of Joule heating on a new field-emitting cathode operatable under the Child-Langmuir’s law

Oda Rikuto1, Sato Hiroki1, Jonghyun Moon1,2, 〇Yoichiro Neo1,2 (1.Eng. Shizuoka univ., 2.RIE Shizuoka Univ.)

[25a-12M-7]Demonstration of an oscillator circuit using FEA-based vacuum transistors

〇Ryosuke Hori1, Tomoaki Osumi1,2, Masayoshi Nagao2, Hiromasa Murata2, Yasuhito Gotoh1 (1.Kyoto Univ., 2.AIST)

[25a-12M-8]Fabrication of HfN Spindt-type Emitter by Triode High Power Pulsed Magnetron Sputtering

〇(M1C)Shun Kondo1,2, Takeo Nakano1, Md. Suruz Mian1, Masayoshi Nagao2, Hiromasa Murata2 (1.Seikei Univ., 2.AIST)

[25a-12M-9]Improvement of Monochromaticity Using Electron Diffraction at Graphene Layer in Graphene-Insulator-Semiconductor-Structured Electron Source

〇Takao Koichi1, Shogo Kawashima1, Satoshi Abo1, Fujio Wakaya1, Masayoshi Nagao2, Katsuhisa Murakami2 (1.Osaka Univ., 2.AIST)

[25a-12M-10]Effects of Oxygen Resistant Thin Film on Planar Type Electron Sources based on Graphene-oxide-Semiconductor Structure

〇(M1)Ren Mutsukawa1,2, Yoshinori Takao1, Hiromasa Murata2, Masayoshi Nagao2, Katsuhisa Murakami2 (1.YNU, 2.AIST)

[25a-12M-11]Lifetime measurement of graphene/p-Si Schottky junction electron emission devices

〇Katsuhisa Murakami1, Hiromasa Murata1, Noriyuki Miyata1, Masayoshi Nagao1 (1.AIST)