セッション詳細
[9p-P13-1~3]15.6 IV族系化合物（SiC）
2025年9月9日(火) 16:00 〜 18:00
P13 (体育館)
[9p-P13-1]Growth of SiC Single Crystals by the Resistive Heating PVT method
〇Gyeongjun Song1, Hajun Kim1, Nakyeoung Kim1, Daeuk Kim1, Chanho Park1, Miseon Park1, Kwanghee Jung1, Junggon Kim1, Wonjae Lee1 (1.Dong-Euni Univ. for Dong-Eui University)
[9p-P13-2]Relief of residual stress and reduction of defect density in SiC crystals by seed adhesion using carbon-based adhesive and graphite foil
〇Nakyeoung Kim1, Gyeongjun Song1, Daeuk Kim1, Chanho Park1, Miseon Park1, Kwanghee Jung1, Junggon Kim1, Wonjae Lee1 (1.Dong-Eui Univ. for Dong-Eui University)
[9p-P13-3]4°オフ 4H-SiC基板表面におけるステップアンバンチング現象
〇(M2)清水 眞秀1、乗松 航1 (1.早大理工)