The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[11p-E206-1~12]13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 11, 2026 1:30 PM - 4:45 PM JST
Fri. Sep 11, 2026 4:30 AM - 7:45 AM UTC
E206 (First Year Education Bld. E Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[11p-E206-1]Growth of Polycrystalline Ru2Ge3 thin films by Solid-Phase Growth

〇Tomoki Hidaka1, Yoshikazu Terai1 (1.Kyushu Inst of Tech)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[11p-E206-2]Growth and Structural Evaluation of Sn-Doped β-FeSi2 Thin Films

〇Reo Idemori1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-E206-3]Preparation of Type II Ge clathrate Films with Thicknesses of 100 nm or Less and Their Near-Ultraviolet Absorption Properties

〇Yuma Iwahashi1, Tetsuji Kume1,2,3, Fumitaka Ohashi1,2,3, Himanshu Jha1,2, Rahul Kumal3, Eito Ito1 (1.GNST, Gifu Univ., 2.Gifu Univ., 3.Gifu Collage)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-E206-4]Stabilization of the Chemical Reaction between Na vapor and Si substrates for the Growth of Si Clathrate Films

〇Shohei Kaneko1, Tsukasa Izuhara1, Himanshu Jha1,2, Fumitaka Ohashi1,2, Tetsuji Kume1,2 (1.GNST, Gifu Univ., 2.Gifu Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-E206-5]Effects of deposition temperature on BaSi2 film growth on vicinal Si substrates by close-spaced evaporation

〇Kanako Ruike1, Hidenori Kawanishi1, Yukiharu Uraoka1, Kosuke Hara1 (1.NAIST)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-E206-6]Control of Ba/Si ratio in sputter-deposited BaSi2 films on Al2O3(0001) Substrates via Elemental Composition Modulation

〇Mizuki Hirai1, Md. Ariful Islam1, Hikaru Takeshima2, Yoichiro Koda2, Masami Meshida2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corporation)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[11p-E206-7]Investigation of ETL and electrode materials for BaSi2 PIN-type solar cells

〇Yuji Ishiguro1, Manuel Enrique Castillo Giron1, Hikaru Takeshima2, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corp.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[11p-E206-8]Thermal Annealing Effects on a-SiC ETLs for BaSi2 Solar Cells

〇Seiya Otsubo1, Yuji Ishiguro1, Mizuki Hirai1, Md. Ariful Islam1, Hikaru Takeshima2, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corp.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)English Presentation

[11p-E206-9]Examining photoresponsivity of BaSi2 films formed on 4H-SiC(0001) via sputtering

〇Manuel Enrique Castillo1, Mizuki Hirai1, Yuji Ishiguro1, Md. Ariful Islam1, Hikaru Takeshima2, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corp.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[11p-E206-10]Evaluation of BaS Thin Films as a Hole Transport Layer for BaSi2 Solar Cells through Experimental and First-Principles Studies

〇(D)Ammara Firdous1, Koki Hayashi1, Nurfauzi Abdillah1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1, Hikaru Takashima2 (1.Univ. Tsukuba, 2.Tosoh Corp.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)English Presentation

[11p-E206-11]Finding a Way to Expose a Clean BaSi2 Surface for Efficient BaSi2 Solar Cell

〇Md Ariful Islam1, Mizuki Hirai1, Hikaru Takeshima2, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corp.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)English Presentation

[11p-E206-12]A Unified High-κ Dielectric Screening Pipeline Based on a Machine Learning Hamiltonian

〇(B)Doyun Kim1,2, Dongik Park2, Juhan Hong1,3, Jaewon Bae2, Chanyoung Park2,3 (1.Seoul Natl. Univ., 2.NanoForge AI, 3.KAIST)
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