Session Details

[15a-W2_402-1~7]15.5 Group IV crystals and alloys

Sun. Mar 15, 2026 10:00 AM - 11:45 AM JST
Sun. Mar 15, 2026 1:00 AM - 2:45 AM UTC
W2_402 (West Bldg. 2)

[15a-W2_402-1][The 3rd Kenji Natori Award Speech] KOSEN-Academia-Industry Co-Creation for Semiconductor Human Resource Development

〇Isao Tsunoda1 (1.NIT, Kumamoto)

[15a-W2_402-2]Theoretical study on stable atomic configuration of SiSn, GeSn, and SiGe crystals

〇Kouji Sueoka1, Hibiki Bekku2, Yusuke Noda3,4 (1.Okayama Pref. Univ., 2.Grad. School of Okayama Pref. Univ., 3.Kyushu Institute of Technology, 4.Data Science and AI Research Center, Kyushu Institute of Technology)

[15a-W2_402-3]Study on atomic arrangement of bulk SiGe observed by X-ray diffraction with synchrotron radiation

〇Ryo Yokogawa1,2,3, Yuta Ito4,5, Yasutomo Arai6, Ichiro Yonenaga7, Taishun Manjo8, Satoshi Tsutsui8, Yuiga Nakamura8, Hibiki Bekku9, Yusuke Noda10, Koji Sueoka11, Atsushi Ogura4,3 (1.RISE, Hiroshima Univ., 2.Grad. Sch. of Eng., Hiroshima Univ., 3.MREL, 4.Meiji Univ., 5.JSPS Research Fellow DC, 6.JAXA, 7.Tohoku Univ., 8.JASRI, 9.Grad. Sch. Compt. Sci. Syst. Eng., Okayama Pref. Univ., 10.Kyushu Inst. Technol., 11.Fac. Compt. Sci. Syst. Eng., Okayama Pref. Univ.)

[15a-W2_402-4]Mechanism of SiC thin film formation by Si surface carbonization using CO gas

〇Tsubasa Hattori1, Masayoshi Adachi2, Hiroyuki Fukuyama2, Momoko Deura1 (1.Waseda Univ., 2.IMRAM, Tohoku Univ.)

[15a-W2_402-5]Evaluation of multi-carrier transport in high-mobility GeH/Ge(111) structure

〇Hiroka Otomo1, Takashi Yoshizaki2, Hikaru Okuma1, Yuhsuke Yasutake1, Susumu Fukatsu1, Yoshiaki Nakamura2, Kazunori Ueno1 (1.Dept. of Basic Sci., UTokyo, 2.Eng. Sci., UOsaka)

[15a-W2_402-6]Observation of Spin signals in Ge(100)-based lateral spin-valve devices

〇Natsuru Sayo1, Kenji Oki1, Sora Obinata1,2, Shuya Kikuoka3, Ryo Ishikawa2,4,5, Kentarou Sawano3, Kohei Hamaya1,2,5 (1.Grad. Shc. Eng. Sci., UOsaka., 2.CSRN, UOsaka., 3.Adv. Res. Lab., Tokyo City Univ., 4.ULVAC, inc., 5.OTRI spin, UOsaka.)

[15a-W2_402-7]Room-temperature spin injection in Ge/SiGe multilayer structures

〇Sora Obinata1,2,3, Shunsuke Tanaka1, Kenji Oki1, Shuya Kikuoka4, Kentarou Sawano4, Kohei Hamaya1,2,3 (1.GSES, The Univ. of Osaka, 2.CSRN, The Univ. of Osaka, 3.OTRI, The Univ. of Osaka, 4.Tokyo City Univ.)