Presentation Information
[1B09]Tin oxide (SnOx) deposition on silicon (100) substrates using low vacuum DC magnetron sputtering
*Michelle Marie Sendaydiego Villamayor1, Angela Centino Ortizano1, Shane Amarillo Bañados1 (1. Physics Department, College of Arts and Sciences, Central Mindanao University)
This study focuses on modifying a low-cost plasma vacuum system for depositing SnOx thin films on Si(100) substrates using DC Magnetron Sputtering. The deposition parameters varied in deposition period and Oxygen Partial Pressure (OPP). The base pressure was 200 Pa. The deposition operated at -750 V target voltage for 10 minutes. SnOx thin films were characterized by SEM, EDX for elemental composition, UV-Vis spectroscopy and two-point probe. SEM analysis showed Sn metallic phases at 10%, 15%, and 20% OPP, with 15% OPP exhibiting widespread Sn coverage. EDX revealed dominant Si, O, and Sn. UV-Vis absorbance showed Si dominance in the visible range (500–700 nm) and peak shifts in 200–400 nm, indicating SnOx absorption. Transmittance results confirmed reduced transparency, supporting absorbance findings. The two-point probe showed increasing current in the blank Si(100), while annealed films exhibited enhanced conductance with increasing voltage. The optical bandgap ranged from 3.11 eV to 3.42 eV. Overall, 15% OPP samples yielded optimal and consistent results across characterization methods.