Presentation Information
[1E09]Non-Contact Si Wafer Temperature Measurement during Dry Etching Process using Disturbance Temperature Cancellation by Dual sensing
*Sho Fujino1, Tateya Iwamoto2 (1. HORIBA, Ltd., 2. HORIBA STEC, Co., Ltd.)
In leading-edge etching processes, process conditions are managed by controlling and monitoring various parameters, and ‘temperature’ is one of the most important parameters. In particular, the temperature control of Si wafers is affected by the etching rate and etching shape, while in-situ measurement of Si wafer temperature during the actual process has not yet been achieved. The Si wafer temperature measurement with a infrared thermometer has been considered problems because of the low emissivity of the Si wafer and several measurement error factors. We have achieved Si wafer temperature measurement below 200 °C, which had been considered difficult with infrared thermometers, using Disturbance Temperature Cancellation by Dual sensing Method (DTCDs). In this paper we described an overview of DTCDs and the results of in-situ measurement of Si wafer temperature during plasma exposure in an actual dry-etching chamber.