Presentation Information
[1F08【招待講演】]MOCVD growth diagrams of group III–VI layered semiconductors toward nano-optoelectronic applications
*Yoshitaka Taniyasu1, Yukihiro Endo1, Yoshiaki Sekine1 (1. Basic Research Laboratories, NTT, Inc.)
We present MOCVD growth phase diagrams for group III-VI layered semiconductors as practical guidelines for controlling crystal phase and morphology toward nano-optoelectronic applications. Using GaxSy as a model system, we show that tuning the growth temperature and VI/III gas ratio enables selective switching between Ga2S3 and GaS phases, as well as between 2D triangular islands and 1D nanobelts. The 1D nanobelts exhibit superior photodetector performance compared to conventional exfoliated flakes, owing to efficient edge contacts. Extending this approach to InSe and GaSSe alloys allows precise bandgap engineering, enabling tailored optoelectronic functionality. This work demonstrates MOCVD as a versatile, scalable platform for phase engineering in layered semiconductors, opening new opportunities for bottom-up integration of high-performance nano-optoelectronic devices.