Presentation Information
[3H01]Fabrication of single-crystalline CoSn kagome metal thin films toward interconnect applications
*Tomoya Nakatani1 (1. National Institute for Materials Science)
The copper interconnects in semiconductor devices suffer from increased resistivity in small dimensions due to surface and interface scattering, stemming from its isotropic Fermi surface and long mean free path. Anisotropic conductors, whose resistivity depends strongly on crystallographic orientation, are promising alternatives. CoSn is the only experimentally confirmed one-dimensional anisotropic metal, showing low resistivity (~3 µΩ cm) along the c-axis and high resistivity in other directions. We fabricated epitaxial CoSn(10-10) films with in-plane c-axis using CoFe/Co/Ru buffer layers on MgO(110). XRD confirmed single crystal growth, although AFM revealed significantly rough surfaces. The resistivity of the CoSn (50 nm) film was 12.9 µΩ cm along the c-axis and 118.0 µΩ cm along the a-axis, clearly demonstrating the anisotropic electronic conduction.