Presentation Information
[3H06]Low temperature deposition of GaN by using high-power impulse magnetron sputtering
*Ikuma Masumori1, Mitsuki Akagawa1, Fuminori Yoda2, Atsushi Fujita2, Tetsuhide Shimizu1 (1. Graduate School of Systems Design, Tokyo Metropolitan University, 2. Shibaura Mechatronics Co., Ltd.)
Gallium nitride (GaN), a wide-bandgap semiconductor with excellent properties, is crucial for optoelectronic and power devices. Traditional methods such as MOVPE and MBE face challenges due to high-temperature and ultra-high vacuum requirements. High Power Impulse Magnetron Sputtering (HiPIMS) offers an alternative approach by generating high-density plasma through short high-voltage pulses at low duty cycles, allowing better control of ion energy. In this study, GaN thin films were deposited using HiPIMS under low-temperature conditions. Structural analysis showed improved crystal orientation compared to conventional DC sputtering, indicating that HiPIMS is a promising method for efficient and low-temperature growth of GaN films.