2024 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation08: Low Dimensional Devices and Materials

[H-5]Characterization-II

Wed. Sep 4, 2024 9:00 AM - 10:15 AM JST
Wed. Sep 4, 2024 12:00 AM - 1:15 AM UTC
Room H (Small Hall)(2nd Floor)
Session Chair: Satoshi Hiura (Hokkaido Univ.), Toshifumi Irisawa (AIST)
9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)Invited

[H-5-01 (Invited)]Modulation of 2D semiconductors by chemical procedures

〇Daisuke Kiriya1 (1. The Univ. of Tokyo (Japan))
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[H-5-02]Why does everyone transfer MoS2 grown on sapphire to a Si substrate?-Interaction between MoS2/sapphire-

〇Shuhong Li1, Keisuke Atsumi1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1. The Univ. of Tokyo (Japan), 2. NIMS (Japan))
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[H-5-03]Thermal-activation-type Electron Transport Behavior in MOCVD MoS2 Film

〇Keisuke Atsumi1, Shuhong Li1, Tomonori Nishimura1, Kaito Kanahashi1, Vincent Tung1, Yoshiki Sakuma2, Kosuke Nagashio1 (1. The Univ. of Tokyo (Japan), 2. National Institute of Materials Science (Japan))
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[H-5-04]Development of a highly sensitive detection module incorporating a charge-sensitive infrared phototransistor and a Ge hemispherical mirror

〇Souichi Nakai1, Fumiyuki Inamura1, Sunmi Kim2, Mikhail Patrashin2, Iwao Hosako2, Susumu Komiyama2,3, Kenji Ikushima1 (1. Tokyo Univ. of agriculture and Technology (Japan), 2. NICT (Japan), 3. Dept. of Basic Science, Univ. of Tokyo (Japan))
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