[B-7] Ferroelectric Materials | 2025 International Conference on Solid State Devices and Materials

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Session Details

Oral Presentation02: Advanced and Emerging Memories / New Applications

[B-7]Ferroelectric Materials

Thu. Sep 18, 2025 1:30 PM - 2:45 PM JST
Thu. Sep 18, 2025 4:30 AM - 5:45 AM UTC

Room B (302, 3rd Floor)

Session Chair: Sanghun Jeon (KAIST), Kouichi Nagai (RAMXEED)

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[B-7-01 (Invited)]Emerging Ferroelectric Materials for Next-Generation Memory and In-Memory Computing

〇Genquan Han¹, Chengji Jin¹, Jiajia Chen¹, Xiao Yu¹, Xiaoxi Li¹, Jiuren Zhou¹, Yan Liu¹ (1. Xidian Univ. (China))

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[B-7-02]Tetragonal-to-Orthorhombic Phase Transition and Dielectric Performance in HZO-Based High-κ Capacitors: The Role of Oxygen Vacancies

〇Dan Lv¹, Yongchang Li¹, Zhenyu Chen², Jian Rong¹, Congcong Xu¹, Lianqi Zhao¹, Lu Wang¹, Mengwei Si², Dongdong Li² (1. Zhangjiang Laboratory (China), 2. Shanghai Jiao Tong University (China))

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[B-7-03]Dimension-Constrained Ferroelectric Phase Engineering of HfO₂ in 3D Structures for High-Density Nonvolatile Memory

〇Xiangyu Cui¹, Zongwei Shang¹, Xijun Zhou¹, Yifan Chen¹, Changqing Ye³, Xing Wu³, Ming Li^1,2 (1. Peking Univ. (China), 2. Beijing Advanced Innovation Center for Integrated Circuits (China), 3. East China Normal Univ. (China))

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[B-7-04]FeFETs with Enhanced Memory Window and Reliability by Hybrid Ferroelectrics Based on Solid Solution/Superlattice Structures and Interface Engineering

〇Yu-Cheng Lin¹, Tsen-Hsiang Pan¹, Yung-Hsien Hsu Wu¹ (1. National Tsing Hua University (Taiwan))