2025 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[H-6]Low Dimensional Materials II

Thu. Sep 18, 2025 10:45 AM - 11:45 AM JST
Thu. Sep 18, 2025 1:45 AM - 2:45 AM UTC
Room H (314, 3rd Floor)
Session Chair: Shunjiro Fujii (Univ. of Hyogo), Takuya Hoshi (NTT Device Technology Lab.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[H-6-01]Tailored Doping Technology towards Enhanced p-Type WSe2 FET Application

〇I-Ling Li1, Cheng-Chieh Hsieh1, Cheng-Yang Hsu1, Han-Hsiang Pai1, Tsung-Che Hsieh1, Hung-Hui Yang1, Chan-Yuen Chang2, Chien-Wei Chen2, Chih-Chao Yang3, Ying-Hao Chu1, Chao-Hui Yeh1 (1. National Tsing Hua Univ. (Taiwan), 2. Taiwan Instrument Research Inst. (Taiwan), 3. Taiwan Semiconductor Research Inst. (Taiwan))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[H-6-02]Wafer-Scale Epitaxial Growth of Monolayer WS2 on Sapphire Using BTBMW Precursor

〇Zih-Siang Jian1,2,3, Wei-Lin Wang2, Wei-Chun Chen2, Wen-Hao Chang1,2,3,4 (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Center for Instrumentation Res., National Applied Res. Labs. (Taiwan), 3. Res. Center for Critical Issues, Academia Sinica (Taiwan), 4. Res. Center for Applied Sciences, Academia Sinica (Taiwan))
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[H-6-03]XPS Study for the Heterostructure of 3D GaN and 2D WS2 Grown by PA-MBE

〇Aminudin Zuhri1, Po-Yen Chen1, Ray-Yu Hong1, Ing-Song YU1 (1. National Dong Hwa University (Taiwan))
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[H-6-04 (Late News)]Machine Learning Assisted Process Optimization for High Polarization of Ferroelectric HfxZr1-xO2 Thin Films

〇Xinrui Ma1, Danyang Chen1, Zhiyu Lin1, Mengwei Si1, Dongdong Li2, Xiuyan Li1 (1. Shanghai Jiao Tong Univ. (China), 2. Zhangjiang Lab. (China))
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