2026 International Conference on Solid State Devices and Materials
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Session Details

Oral Presentation01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[A-7]Process for memory

Thu. Sep 17, 2026 12:45 PM - 2:00 PM JST
Thu. Sep 17, 2026 3:45 AM - 5:00 AM UTC
Room A(Convention Hall 1, 2rd Floor)
Session Chair:Kasidit Toprasertpong(the Univ. of Tokyo), Shoichi Kabuyanagi(Kioxia Corporation)
12:45 PM - 1:00 PM JST(3:45 AM - 4:00 AM UTC)

[A-7-01]Relationship between Electrical Characteristics and Crystal Phases in High-k HfO2–ZrO2 Systems

〇Takamasa Kawanago1,2, Takefumi Kamioka1,2, Yukinori Morita1,2, Naoya Okada1,2, Kenzo Manabe1,2, Wataru Mizubayashi1,2, Hiroyuki Ota1,2, Takashi Matsukawa1,2, Shinji Migita1,2 (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 2. LSTC (Japan))
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[A-7-02]Improvement of Endurance Properties in Ferroelectric HfxZr1−xO2 Thin Films by Designing Interfaces Using Oxygen Blocking Layers

〇Takashi Onaya1, Toshihide Nabatame1, Takahiro Nagata1, Kazuhito Tsukagoshi1 (1. NIMS (Japan))
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[A-7-03]Hydrogen-Induced Boron Deactivation and Reactivation via Interstitial-Complex Dissociation in CMOS

〇Pooi Lee Tung1,2, Sanchali Mitra3, Yee Sin Ang3, Yan Song2, Kah Wee Ang1 (1. National University of Singapore (NUS) (Singapore), 2. Micron Semiconductor Asia Pte. Ltd (Singapore), 3. Singapore University of Technology and Design (SUTD) (Singapore))
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[A-7-04]A New Approach to Reducing Interface Traps for Improved Refresh Retention in Modern DRAMs

〇Yongmin Jung1, Sungyeob Ha1, Taehoon Park1, Dongkyu Jang1 (1. Samsung Electronics (Korea))
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[A-7-05]Efficient thermal treatment for robust refresh retention for 14nm DRAM

〇Kyoungrock Nho1, Dongkyu Jang1, Inkyum Lee1, Shindeuk Kim1, Taehoon Park1 (1. Samsung Electronics (Korea))
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