講演情報
[19a-A309-9]Formation of SiC layers on silicon nanowires
〇(M2)Pengyu ZHANG1,2, Yonglie Sun1, Jevasuwan Wipakorn1, Naoki Fukata1,2 (1.NIMS, 2.Univ. of Tsukuba)
キーワード：
1D nanostructure、Silicon Carbide
One-dimensional (1D) nanomaterials, nanowires (NWs) and nanotubes, are a highly successful extension of the silicon industry's products. This kind of structures have the advantages such as large junction area, high integration density and high specific surface area. The other important thing is that the carbon based materials such as C and SiC has an affinity for cells and does not affect cells or tissues, making them very popular for biological applications. We have now focus on investigate nanowire structures coated with different substances. Now we focused on the preparation of nanowire silicon carbide silicon shell core structures as well as silicon carbide nanotubes, which are expected to be used in application in future biological genetic testing.
The aim of this study is to develop a method to obtain special 1D structures of sufficiently good quality by chemical vapor deposition (CVD) and to grow SiC 1D structures.
The aim of this study is to develop a method to obtain special 1D structures of sufficiently good quality by chemical vapor deposition (CVD) and to grow SiC 1D structures.