[21p-C501-1~19] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

13:45 〜 14:00英語発表

[21p-C501-2] High thermal tolerance and over 230% magnetoresistance in perpendicularly magnetized magnetic tunnel junction using an Mg₄₀Fe₁₀O₅₀ barrier

〇Tatsuya Yamamoto¹, Tomohiro Ichinose¹, Jun Uzuhashi², Takayuki Nozaki¹, Tadakatsu Ohkubo², Kay Yakushiji¹, Shingo Tamaru¹, Hitoshi Kubota¹, Shinji Yuasa¹ (1.AIST, 2.NIMS)

キーワード：

magnetic tunnel junction、tunnel magnetoresistance、perpendicular magnetic anisotropy

We develop perpendicularly magnetized magnetic tunnel junctions (MTJs) using an Mg₄₀Fe₁₀O₅₀ (MgFeO) barrier. It is found that the CoFeB layer exhibit a good wettability on the MgFeO layer. Ferromagnetic resonance measurements reveals that the improved structural homogeneity in the free layer results in an enhanced perpendicular magnetic anisotropy as well as an improved magnetic homogeneity. Also, the superior tolerance of MgFeO-MTJs against high-temperature annealing allows for achieving magnetoresistance which is even larger than MgO-MTJs.