セッション詳細
[21p-C501-1~19]10.3 スピンデバイス・磁気メモリ・ストレージ技術
2023年9月21日(木) 13:30 〜 18:45
C501 (国際交流会館)
三輪 真嗣(東大)、 山本 竜也(産総研)、 黒川 雄一郎(九大)
[21p-C501-1][講演奨励賞受賞記念講演] CoFeSiB軟磁性層を用いたトンネル磁気抵抗センサ
〇中野 貴文1、藤原 耕輔2、熊谷 静似2、安藤 康夫1,3、大兼 幹彦1,3 (1.東北大工、2.SSF(株)、3.東北大CSIS)
[21p-C501-2]High thermal tolerance and over 230% magnetoresistance in perpendicularly magnetized magnetic tunnel junction using an Mg40Fe10O50 barrier
〇Tatsuya Yamamoto1, Tomohiro Ichinose1, Jun Uzuhashi2, Takayuki Nozaki1, Tadakatsu Ohkubo2, Kay Yakushiji1, Shingo Tamaru1, Hitoshi Kubota1, Shinji Yuasa1 (1.AIST, 2.NIMS)
[21p-C501-3]Investigation on shape of free layers to improve sensitivity in magnetic-vortex-type TMR sensors
〇Seiya Takano1, Takafumi Nakano1, Muftah Al-Mahdawi2, Mikihiko Oogane1 (1.Graduate School of Engineering, Tohoku Univ., 2.CSIS, Tohoku Univ.)
[21p-C501-5]Bias voltage robustness in double-free-layer stochastic magnetic tunnel junction
〇大田 陸斗1,2、小林 奎斗1,2、早川 佳祐1,2、金井 駿1,2,3,4,5,6,7、Kerem Camsari8、大野 英男1,3,4,9、深見 俊輔1,2,3,4,9,10 (1.東北大通研ナノスピン研究施設、2.東北大工学研究科、3.東北大CSIS、4.東北大WPI-AIMR、5.JST-PRESTO、6.東北大DEFS、7.QST、8.Dept. Elec. and Comp. Eng., UCSB.、9.東北大CIES、10.InaRIS)
[21p-C501-6]Temperature dependence of the switching attempt time of superparamagnetic tunnel junctions
〇Haruna Kaneko1,2, Rikuto Ota1,2, Keito Kobayashi1,2, Shun Kanai1,2,3,4,5,6,7, Mehrdad Elyasi5,6,8, Gerrit Bauer5,6,8,9, Hideo Ohno1,5,6,10, Shunsuke Fukami1,2,5,6,10,11 (1.RIEC, Tohoku Univ., 2.Grad. School of Eng., Tohoku Univ., 3.JST PRESTO, 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.QST, 8.IMR, Tohoku Univ., 9.Kavli ITS, UCAS, 10.CIES, Tohoku Univ., 11.InaRIS)
[21p-C501-7]Quantum-annealing approach for design of magnetic tunnel junction: Case study of inverse-spinel MgGa2O4 tunnel barrier
〇Kenji Nawa1,2, Tsuyoshi Suzuki3, Keisuke Masuda2, Shu Tanaka4,5, Yoshio miura2,6 (1.Mie Univ., 2.NIMS, 3.TDK Corp., 4.Keio Univ., 5.WPI-Bio2Q, Keio Univ., 6.CSRN, Osaka Univ.)
[21p-C501-8]Evaluation of structural, electrical and magnetic properties in nanoscale junctions using high-mobility molecules
〇Mizuki Matsuzaka1, Takahiro Misawa2, Ryunosuke Miyamoto1, Zijing Zhang1, Kenta Sato1, Yuma Sasaki2, Junji Nishii2, Hideo Kaiju1,3 (1.Keio Univ., 2.RIES, Hokkaido Univ., 3.CSRN, Keio Univ.)
[21p-C501-9]Self-induced current trap of spin torque oscillation
〇Takahiko Makiuchi1, Naoki Kanazawa2, Eiji Saitoh1,3,4 (1.Univ. Tokyo, 2.IBM Quantum, 3.BAI, Univ. Tokyo, 4.AIMR, Tohoku Univ.)
[21p-C501-11]Precise evaluation of pipe thickness by magnetic hammer testing using tunnel magneto-resistive sensors
〇(DC)Jun Ito1, Ryota Odagiri1, Shigetaka Suzuki1, Hiroshi Wagatsuma1, Kazuhiro Sugiyama1, Mikihiko Oogane1 (1.Tohoku univ.)
[21p-C501-12]心磁図計測データの機械学習によるノイズ低減
〇(D)岸本 尚基1、渋谷 星斗1、アルマダウィ ミフタ2、大兼 幹彦1 (1.東北大学工学研究科応用物理学専攻、2.東北大学先端スピントロニクス研究センター)
[21p-C501-13]磁気光学型光変調素子のノッチ構造による磁区制御
〇青島 賢一1、小西 伶美2、川那 真弓1、東田 諒1、船橋 信彦1、秋山 泰伸2、町田 賢司1 (1.NHK技研、2.東海大工)
[21p-C501-14]Perpendicular magnetic anisotropy enhanced by inserting NaF at the Fe/MgO interface
〇(M2)Jieyi Chen1, Shoya Sakamoto1,2, Shinji Miwa1,2 (1.ISSP, Univ. Tokyo, 2.TSQS, Univ. Tokyo)
[21p-C501-15]Field-free spin-orbit torque magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer
〇(M2)Xinyuan Yang1, Chenda Wang1, Miao Jiang1,2, Shinbu Ohya1,3, Masaaki Tanaka1,3 (1.Univ. Tokyo, 2.Beijing Inst of Technology, 3.CSRN,Univ. Tokyo)
[21p-C501-16]Impact of nitrogen on large charge-to-spin conversion efficiency in a non-collinear antipervoskite Mn3PtN antiferromagnet
〇(D)TRIPATHI NITIPRIYA1, Shrawan Kumar Mishra1, Shinji Isogami2, Yukiko Takahashi2 (1.IIT(BHU), India, 2.NIMS, Tsukuba Japan)
[21p-C501-17]Evaluation of thermal stability in L10 ordered MnAl nanodots
〇(M2)Takanobu Shinoda1,2, Yutaro Takeuchi3, Butsurin Jinnai3, Junta Igarashi1, Yuma Sato1,2, Shunsuke Fukami1,2,3,4,5,6, Hideo Ohno1,2,3,4,5 (1.RIEC, Tohoku Univ., 2.Grad. Sch. Eng, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ., 4.CSIS, Tohoku Univ., 5.CIES, Tohoku Univ., 6.InaRIS)
[21p-C501-18]Suppression of magnetic domain wall shift error in 3D racetrack memory
〇Namhai Pham1, Takanori Shirokura1, Nguyen Huynh Duy Khang2 (1.Tokyo Tech, 2.Hochiminh Univ. Edu.)
[21p-C501-19]Ultra-High Domain Wall Velocity in GdFe Thin Films for Racetrack Memory Applications
〇(P)Mojtaba Mohammadi1, Satoshi Sumi1, Pham Van Thach2, Kenji Tanabe1, Hiroyuki Awano1 (1.Toyota Technological Institute, 2.Vietnam Academy of Science and Technology)