講演情報
[21p-P05-1]Effect of Low As Flux Annealing to the 2D-3D Transition of SML Nanostructures
〇(PC)Ronel Intal Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
キーワード：
MBE、SML、Annealing
Stacked submonolayer (SML) InAs/GaAs nanostructures grown by molecular beam epitaxy (MBE) is an alternative to the conventional Stranki-Krastanov (SK) nanostructures. Recently, transition from 2D (layer-to-layer) to 3D growth regime has been investigated. However, the detailed process of the SML transition is still not well understood. In the present work, the effect of post-growth annealing under low As flux to the growth transition is investigated. Lowering the As flux increases surface diffusion length of adatoms, which in turn may influence SML transition. It will be shown that low As flux annealing encourages 3D formation, which results in larger 3D SML nanostructures.