[22a-A201-1~12] CS.8 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

12:00 〜 12:15英語発表

[22a-A201-12] Impact of HZO Scaling in FeFET on the electrical characteristics

〇(D)ZUOCHENG CAI¹, KASIDIT TOPRASERTPONG¹, MITSURU TAKENAKA¹, SHINICHI TAKAGI¹ (1.The Univ. of Tokyo)

キーワード：

HZO scaling、FeFET

A HZO-based FeFET has been recognized as a promising candidate for non-volatile memory, logic, and Al accelerator. However, several problems including high-voltage operation greatly impede their applications. In MFM capacitors for FeRAM, HZO thickness scaling has been proven to be an efficient approach for reducing voltage. Although there is a report on HZO scaling in p-FeFET, systematic studies regarding the impact of HZO thickness scaling on FeFET memory characteristics are still lacking. In this work, we experimentally examine the memory characteristics of FeFETs with HZO thickness ranging from 11 to 4.6 nm with an emphasis on low-voltage operation, the I_on/I_off ratio and the S.S. value.