講演情報
[22a-C402-9]Enhanced internal quantum yield for dysprosium doped novel niobate based phosphors
〇(DC)Kanishk Poria1, Nisha Deopa2, Jangvir Singh Shahi1 (1.Panjab Univ., 2.Ch. Ranbir Singh Univ.)
キーワード：
phosphors、dysprosium、w-LED
In order to develop a phosphor suitable for white light emitting diode (w-LED) applications, a series of novel Na3Ba2LaNb10O30 phosphors doped with dysprosium (Dy3+) were synthesized using the solid-state reaction technique at a temperature of 1300 °C. Its structural and luminescent characteristics were investigated at various Dy3+ ion doping concentrations. X-ray diffraction (XRD) analysis confirmed that the prepared phosphors were single phase and exhibited a tetragonal tungsten bronze structure with the P4bm space group. Excited by near-ultraviolet (n-UV) irradiation at 387 nm, the photoluminescence (PL) emission spectra exhibited three distinct bands at 481 nm, 575 nm, and 666 nm. The optimized Dy3+ ion concentration for the phosphors was found to be 7.0 mol%, beyond which concentration quenching occurred. The CIE chromaticity coordinates, correlated color temperature (CCT), and color purity confirmed the formation of warm white light emitting phosphors. The optimized phosphor exhibited an internal quantum yield (IQE) of 45.35% and a brightness (B) of 11.41%, making it a suitable phosphor for w-LED applications.