講演情報
[22p-P07-6]Decomposition and Size Distribution Monitoring of AlTiO and MoS2 Precursor Mist Particles using a Fast-Scanning Mobility Particle Sizer
〇(PC)Abdul A Kuddus1, Kojun Yokoyama2, Keiji Ueno2, Shinichiro Mouri1, Hajime Shirai2 (1.Ritsumeikan Univ., 2.Saitama Univ.)
キーワード：
Size distribution、Mist particle、Mist CVD
Mist particle size plays a significant role in the synthesis of uniform and high-quality thin films in mist CVD deposition of metal oxides, semiconductors, and polymers thin films [1,2]. The exploration of precursor mist decomposition and the size distribution of precursor mist leads to more precisely tunning both thin film and its interface properties. In this work, we investigated the correlation between the size distribution of mist particles, thin film properties, and interface quality of AlTiO metal-oxide and MoS2 two-dimensional materials films to be applied in transfer-free field-effect transistor (MOSFET) by mist-CVD. The size distribution of Al(acac)3+Ti(acac)4 mist particles at the outlet of the tubular furnace for different CH3OH/H2O ratios of 70/30 was observed. The broad bands appeared to have a maximum at ∼10 and ∼25 nm attributed to TiOx- and AlOx-related complex, respectively, with a systematic change in number density with composition ratios. On the other hand, the average size of (NH4)2MoS4 mist particle showed a maximum at ~75 nm with a shoulder peak at ~40 nm and the tail distribution toward the larger mist size. Though broadbands having a maximum size of 50 and 130 nm in the case of solely Ar as a carrier gas, marked changes in those at 20-30 nm particles with intense peaks were found and reduced 130 nm particles when H2 was added in Ar as shown in Fig.1(b-d). This suggests the use of H2 addition with Ar as a dilution gas accelerates the promotion of the mist particles decomposition, resulting in the formation of a uniform thin film with reduced surface roughness (RMS< 0.4 nm) and improved MOSFETs performance.