講演情報
[23p-A602-7]Ge epitaxial layer grown on V-groove patterned Si substrate
〇(D)FAIZ FAIZ MOHD1, Jose A. Piedra-Lorenzana1, Keisuke Yamane1, Takeshi Hizawa1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Uni of Tech, 2.SUMCO)
キーワード：
Germanium、CVD growth、Ge epitaxial layer
Epitaxial growth of Ge film on Si is used for fabrication of near-infrared photodetectors in Si photonics. A high-quality Ge film is required for the high-performance devices despite a large lattice mismatch of 4% between Ge and Si. Recently, we reported that the threading dislocation density (TDD) is significantly reduced in a Ge film by patterning the Si surface with an array of rectangular trenches on the submicron scale. TDD reduction is derived from the dislocation trapping in the trench regions. In this work, an array of V-groove trenches with {111} facet sidewalls is examined, indicating a similar TDD reduction.