講演情報
[10a-N221-10]Influence of surface oxidation on resonance characteristics of SiC and Si photonic nanocavities
〇Heungjoon Kim1, Bong-Shik Song2, Susumu Noda1,3, Takashi Asano1 (1.Kyoto Univ., 2.Sungkyunkwan Univ., 3.KUIAS)
キーワード：
Photonic crystal nanocavities、Silicon、Silicon carbide
Photonic crystal nanocavities based on semiconductors such as silicon (Si) and silicon carbide (SiC) exhibit ultrahigh Q factors and small mode volumes, which are key components in integrated photonic circuits. However, their resonance characteristics are often affected by surface oxidation upon air exposure. In this work, we quantitatively investigate the influence of oxidation on the resonance characteristics of Si and SiC nanocavities using controlled ozone gas oxidation followed by hydrofluoric acid (HF) treatment. The Si nanocavity exhibits wavelength shift toward shorter wavelengths by ~0.6 nm after ozone oxidation, and further shift by ~1.6 nm after HF treatment, resulting in a total blue shift of ~2.2 nm. On the other hand, the resonant wavelength of the SiC nanocavity slightly shifts to longer wavelengths by ~0.1 nm after ozone oxidation and to shorter wavelengths by ~0.13 nm, yielding a small total blue shift of 0.03 nm. These results clearly show that the e ffects of surface oxidation are significantly smaller in the SiC nanocavity. Reproducibility was also confirmed for both nanocavities through repeated cycles of the oxidation and subsequent HF treatment.