講演情報
[7p-N205-4]Study of Gated 2D Semiconductors using Time-Resolved ARPES
〇(DC)Harley Suchiang1, Takumi Fukuda1, Xing Zhu1, Xueqi Chen2, Filchito Renee G Bagsican1,3, Nanami Tomoda1, Sathvik Ajay Iyengar1,4, Ouri Karni5, Suji Park6, Houk Jang6, Kenji Watanabe7, Takashi Taniguchi7, Julien Madeo1, Michael K L Man1, Keshav M Dani1 (1.OIST, 2.Stanford Univ., 3.Shizuoka Univ., 4.Rice Univ., 5.NTT Research, Inc., 6.Brookhaven Nat. Lab., 7.NIMS)
キーワード：
Time-Resolved ARPES、2D Semiconductor
Two-dimensional (2D) semiconductors, such as monolayer (1L) transition metal dichalcogenides (TMDs), host tightly bound excitonic species. Recently, time- and angle-resolved photoemission spectroscopy (TR-ARPES) has shown great promise in studying these photoexcited states due to its ability to resolve momentum, which has resulted in the measurement of the excitonic wavefunction as well as the study of dark excitons. These initial studies were conducted in nominally undoped samples; however, the ability to study momentum-resolved dynamics in doped samples will open new avenues of investigation. In this talk, we will demonstrate electrostatic charging of a gated 1L TMD in a momentum microscope apparatus, which will enable us to study gated 2D semiconductors using TR-ARPES.