講演情報
[7p-N301-14]Cycling induced imprint phenomenon at intermediate state used for multi-level operation in HfO2-FeFET
〇Viktoria Schlykow1, Kunifumi Suzuki1, Yoko Yoshimura1, Hidesato Ishida1, Kiwamu Sakuma1, Kazuhiro Matsuo1, Masumi Saitoh1, Reika Ichihara1 (1.Kioxia Corporation)
キーワード：
FeFET、imprint、multi-level
We present a detailed understanding of the imprint behavior during cycling at intermediate states, consisting of programmed and erased domains, used for multi-level operation in HfO2-FeFET devices. Analysis of the transient current, corresponding to spontaneous polarization reversal, clarified that domains, kept at the same state, are independently affected by imprint even if the neighboring domains are reversed every time, which is a possible scenario during multi-level operation. Furthermore, imprint like phenomenon during cycling is more serious compared to imprint during retention, indicating that electrical stress without spontaneous polarization reversal accelerates the imprint effect. We demonstrate two strategies for reliable multi-level operation: (I) full program/erase before programming of the intermediate states and (II) addition of full program/erase (refresh) after cycling.