講演情報
[8a-P09-1]Nanotwinned Copper Formation Technology Using Inorganic Additive-Induced (111) Crystal Orientation
〇(DC)SooWoong Park1, Jaejeong Kim1 (1.Seoul National Univ.)
キーワード：
Semiconductor、Cu electroplating、Nanotwinned copper
Nanotwinned copper (nt-Cu) offers superior mechanical strength, thermal stability, and electromigration resistance, making it attractive for microelectronic interconnects. In particular, (111)-oriented nt-Cu films with dense twin boundaries are known to enhance reliability. This study presents a single-step electrochemical deposition method to fabricate such films using a conventional acidic copper sulfate bath with a specially selected inorganic additive. The plating solution included copper sulfate, sulfuric acid, chloride ions, gelatin, and the additive, operated under galvanostatic conditions in direct current mode. SEM and EBSD analyses revealed dense columnar grains and a high fraction of (111)-oriented domains aligned along the growth direction. IPF maps confirmed a strong (111) texture perpendicular to the substrate. The films exhibited smooth morphology without pits or voids, and the process showed stable performance across conditions. This additive-assisted strategy offers a practical route for producing high-quality nt-Cu films compatible with existing semiconductor metallization processes.