[9a-N303-1~9] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

9:45 〜 10:00英語発表

[9a-N303-4] Theoretical and experimental studies for understanding the TMR oscillation

〇Keisuke Masuda¹, Thomas Scheike¹, Hiroaki Sukegawa¹, Yusuke Kozuka¹, Seiji Mitani¹, Yoshio Miura^1,2 (1.NIMS, 2.KIT)

キーワード：

TMR、magnetic tunnel junction、oscillation

TMR oscillation is a phenomenon in which the TMR ratio oscillates as a function of the insulating barrier thickness. It has been successibly observed in crystalline magnetic tunnel junctions that exhibit high TMR ratios. However, the underlying mechanism of this phenomenon has remained unresolved for over 20 years. In this talk, we will present the results of our recent theoretical and experimental studies for understanding the TMR oscillation.