講演情報
[9a-N303-9]Efficient spin-charge conversion at room temperature from 2DEGs in ferroelectric BaTiO3 films
〇Bibes Manuel1 (1.Lab. Albert Fert)
キーワード：
oxide 2DEGs、ferroelectricity
Two-dimensional electron gases (2DEGs) at oxide interfaces have emerged as versatile platforms for spin-orbitronics, combining strong Rashba spin-orbit coupling with gate-tunable transport. In particular, 2DEGs based on SrTiO3 have demonstrated efficient spin-charge conversion via the inverse Edelstein effect. Embedding such functionality in a ferroelectric yields a non-volatile control of spin-charge conversion, offering pathways into novel logic devices and architectures. Here, we demonstrate spin-charge conversion at room temperature in 2DEGs formed within epitaxial BaTiO3 thin films displaying Curie temperature beyond 300°C, switching voltages in the 100 mV range and endurance beyond 1011 cycles. When interfaced with a ferromagnetic layer, these 2DEGs yield room-temperature spin-charge conversion efficiencies comparable to the best SrTiO3-based systems. Our results pave the way towards the realization of attojoule-class FESO devices and architectures.