講演情報
[9a-P02-7]Carrier Density Control via PLD Kinetic Energy Tuning in γ-Al2O3/SrTiO3 Heterostructures
〇(D)JIWON YANG1, Lippmaa Mikk1 (1.ISSP, UTokyo)
キーワード：
heterostructure、pulsed laser deposition、weak antilocalization
We studied an oxide interface, γ-Al2O3/SrTiO3, where high-mobility electrons form a thin conducting layer at the interface. This system also exhibits a built-in electric field due to the Rashba effect, which gives rise to spin-orbit interaction—useful for spin-based devices. Instead of applying gate voltage, we used pulsed laser deposition (PLD) and tuned the laser pulse energy during growth to control the carrier density without altering the quantum well confinement. All samples showed conduction only at the interface. We investigated quantum transport using weak antilocalization (WAL) measurements, analyzed with the ILP model. As the carrier density decreased, both the phase coherence length and spin-flip length increased.