講演情報
[9a-P04-11]The influence of size engineering for aligned-well vertical Si/Ge nanosheets array using SWIR photodetector
〇(D)Guanghui WANG1,2, Jevasuwan Wipakorn2, Fukata Naoki1,2 (1.University of Tsukuba, 2.NIMS MANA)
キーワード：
Si/Ge core-shell、Nanosheets、Photodetector
Semiconductor nanostructures, especially optoelectronic detection devices represented by silicon/germanium (Si/Ge) core-shell vertical nanostructures, have received widespread attention in recent years. The Si/Ge core-shell vertical nanostructure exhibits great potential in improving carrier mobility, enhancing photogenerated carrier separation efficiency, and improving device stability due to its excellent heterojunction interface quality and unique band structure. Although Si/Ge core-shell vertical nanosheets have shown promising prospects in the field of optoelectronic detection, there are still several urgent issues that need to be addressed in current research. For example, in the preparation process of nanosheet arrays, how to accurately control the orientation of nanosheets and maintain the uniformity of the array is one of the important challenges to achieve maximum performance. In addition, the specific effects of array density and aspect ratio of nanosheets on optoelectronic performance are not yet clear, and existing research mostly focuses on a single or few parameters, lacking systematic and comprehensive exploration. In this report, we achieved a significant improvement in the performance of the photodetector by changing the aspect ratio and density of the nanosheet, allowing its absorption to reach 100% and enabling selective absorption within a specific wavelength range. The purpose of this work is to reveal the physical mechanism between parameter regulation and optoelectronic performance improvement of Si/Ge nanosheet arrays, providing important experimental basis and theoretical guidance for the design of future high-performance nanostructure photodetectors.