講演情報
[9p-N306-2]GHz-Burst Femtosecond Laser Ablation of Silicon at 515 nm Wavelength
〇Ashkan MomeniBidzard1, Shota Kawabata1, Kotaro Obata1, Koji Sugioka1 (1.RIKEN, RAP)
キーワード：
Femtosecond Laser Processing、GHz burst
In this paper, we present both experimental and simulation studies of green-wavelength GHz burst mode laser ablation of silicon (Si), accompanied by an analysis of the underlying mechanisms. The experimental results indicate that employing GHz burst mode laser at 515 nm enhances Si ablation efficiency by a factor of 2.4 for 25 intra-pulses compared to the conventional single-pulse irradiation. Numerical simulation results suggest that the enhancement in ablation efficiency may arise from a transient increase in absorption caused by the interaction of successive intra-pulses within the GHz burst with Si.