[1-1]Vacancy Distribution Theory for Ion-Implanted Target
S. Furukawa、H. Ishiwara(1.Tokyo Institute of Technology)
1970 Conference on Solid State Devices
1970年9月21日〜9月22日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する
1970 Conference on Solid State Devices
1970年9月21日〜9月22日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(34)
[1-2]Electron Microscopic Studies of Crystal Defects in Boron and Phosphorus Implanted Silicon
M. Tamura、T. Ikeda、T. Yoshihiro(1.Hitachi Ltd.)
[1-3]Radiation Enhanced Diffusion and It's Application for Device Fabrication
T. Abe、Y. Ohmura、M. Konaka、H. Ohtsubo、M. Kanazawa、K. Koike(1.Tokyo Shibaura Electric Co., Ltd.)
[1-4]A New Phosphorus Diffusion Technology from the Phosphosilicate Glass
T. Okabe、E. Tanikawa(1.Fujitsu Ltd.)
[2-1]Preferential Etching of GaAs and It's Application to Devices
Y. Tarui、Y. Komiya、Y. Harada(1.Electrotechnical Lab.)
[2-2]Vapor Effect on the Impurity Profity Profiles of Vapor Grown GaAs Epitaxial Layers
M. Hirao、H. Nakashima(1.Hitachi Ltd.)
[2-3]Effect of Heat Treatment on Photoluminescence of GaAs and Its Surface Coated with SiO2
H. Nakashima(1.Hitachi Ltd.)
[2-4]Ohmic Contacts to GaP Devices for Use at High Temperatures
H. Nakatsuka、A. J. Domenico、G. Pearson(1.Stanford Electronics Labs.)
[2-5]Correlation of Image Defects with Crystal Defects in Silicon Vidicon
H. Shiraki、J. Matsui、T. Kawamura(1.Nippon Electric Co., Ltd.)
[3-1]Switching Phenomena in Chalcogenide Glass Semiconductor
S. Iizima、M. Sugi、M. Kikuchi、K. Tanaka(1.Electrotechnical Lab.、2.Sophia University)
[3-2]Current Break‐off and "Memory" Effects in SbSI-SnO2 Heterostructure Thin Film
Y. Hamakawa、M. Yoshida(1.Osaka University)
[3-3]Electrical and Optical Properties of PiO2 Semiinsulator-Silicon Junctions
T. Tsutsumi(1.Tokyo Shibaura Electric Co., Ltd.)
[3-4]Silicon Magnetodiode
M. Arai、T. Yamada(1.Sony Corporation)
[3-5]A Diode Integrated High Speed Thyristor
T. Yatsuo、T. Ogawa、K. Morita(1.Hitachi Ltd.)
[4-1]Bulk Negative Resistance Enhanced by Trapping Through Upper Valleys in Semiconductors
Y. Tokumaru、N. Mikoshiba(1.Electrotechnical Lab.)
[4-2]High Power GaAs Traveling-Wave Amplifier
H. Kanbe、K. Kumabe、R. Nii(1.Nippon Telegraph and Telephone Public Corporation)
[4-3]Domain Dynamics in Dielectric Surface Loaded Gunn Devices
M. Kawashima、H. Tateno、S. Kataoka、K. Tomizawa、M. Morisue(1.Electrotechnical Lab.、2.Meiji University、3.Saitama University)
[4-4]Frequency Dependence of Microwave Mobility of Hot Electron in N-type GaAs
S. Kaneda、M. Abe(1.Osaka University)
[4-5]Electrically Controllable Surface Acoustic Devices
M. Yamanishi、K. Yoshida(1.University of Osaka Prefecture)
[5-1]Structure and Characteristics of Multilayer (GaAs-AlxGa1-xAs) Double Heterostructure Injection Lasers
I. Hayashi、M. B. Panish、P. W. Foy、S. Sumski(1.Bell Telephone Labs.)
[5-2]Internal Q-Switching in Electron Beam Excited Gallium Arsenide Lasers
A. Masuyama、M. Kawabe、K. Masuda、S. Namba(1.Osaka University)
[5-3](Ga･ Al) As PNPN Diodes
S. Yano、T. Sakurai、T. Inoguchi(1.Sharp Corporation)
[5-4]Amorphous Semiconductor Optical Memory Devices
S. Asai、E. Maruyama(1.Hitachi Ltd.)
[5-5]Color Modulator Using Oblique-Cut Strontium-Barium-Niobate Plates
S. Sakamoto、K. Kanatani、T. Yazaki(1.Sanyo Electric Co., Ltd.)
[5-6]High-Efficiency Ge Modulator for Infrared (Laser) Beams
M. Umeno、H. Hattori、S. Miki(1.Nagoya University)
[6-1]Anomalous Low Frequency Noise in MOS Transistors at Low Temperature
M. Nakahara(1.Fujitsu Ltd.)
[6-2]DSA. MOS. IC
Y. Tarui、Y. Hayashi、T. Sekigawa(1.Electrotechnical Lab.)
[6-3]Surface Electron Mobility of Silicon MISFETs with Various Gate Insulator Structures
I. Yoshida、T. Miyazaki、Y. Katayama、N. Kotera(1.Hitachi Ltd.)
[6-4]Anomalous Galvano-Magnetic Effects in Surface Inversion Layer of Semiconductor
Y. Uemura、Y. Matsumoto(1.University of Tokyo)
[6-5]Tunable Infrared Detector Using Photoconductivity of Quantized Electrons in MOS Transistor
Y. Katayama、N. Kotera、K. F. Komatsubara(1.Hitachi Ltd.)
[7-1]New Functional Operations with Avalanche Diode
M. Ohmori、H. Niizuma、Y. Ishii、K. Suzuki(1.Nippon Telegraph and Telephone Public Corporation)
[7-2]Waveguide Encapsulated mm-Wave IMPATT Diode
Y. Toyama、M. Shinoda、Y. Fukukawa、T. Inoue(1.Fujitsu Ltd.)
[7-3]Determination of Intrinsic Response Times of Electrons and Holes from Avalanche Noise Measurements
I. M. Naqvi(1.Honeywell Inc.)
[7-4]A New Microwave Element Composed of YIG and Semiconductor Crystals
K. Kozuka、M. Umeno、S. Miki(1.Nagoya University)
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